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"work_location_option": null, "canonicalPositionUrl": "https://careers.micron.com/careers/job/19413210", "isPrivate": false}, {"id": 19315795, "name": "Gas Engineer, Global Facilities & Construction North Asia", "location": "Higashi Hiroshima-shi, Hiroshima, Japan", "locations": ["Higashi Hiroshima-shi, Hiroshima, Japan"], "hot": 0, "department": "Front End", "business_unit": "Front End", "t_update": 1701675635, "t_create": 1701043200, "ats_job_id": "JR43878", "display_job_id": "JR43878", "type": "ATS", "id_locale": "JR43878-en", "job_description": "Provide consultation and support to Site Facilities & Manufacturing teams in North Asia region Collaborate with internal partners and collaborators including Technology Development Team, Procurement, Finance, Legal, etc. Analyze system designs to identify improvements that will result in better performance, efficiency gains, reduced maintenance, and cost savings Support sites with problem analysis using standard tools and methodologies as requested Maintain leading technical knowledge on your respective area including for Industry Trends and Technological advances, emerging technology roadmap, Design Innovations, Sustainability, etc.) Provide Design and Construction Project Support, Leadership, and Expertise Support new large-scale, Facilities Infrastructure Expansion projects Develop the system design concepts and standards to be deployed into the Design and Construction Projects Ensure appropriate communication with local Facilities, Design, Construction, Procurement and Manufacturing partners as required to deliver project objectives Perform timely review of design packages and providing documented comments and feedback as vital Provide support for cost and schedule estimates and justification for approval Ensure that scope meets customer needs and lead changes Participate and/or lead capacity and scenario planning, including evaluation of system and distribution capacity impacts based on scenario", "stars": 0.0, "medallionProgram": null, "location_flexibility": null, "work_location_option": null, "canonicalPositionUrl": "https://careers.micron.com/careers/job/19315795", "isPrivate": false}, {"id": 19296299, "name": "\u7b2c2\u65b0\u5352 Technology Development", "location": "Higashi Hiroshima-shi, Hiroshima, Japan", "locations": ["Higashi Hiroshima-shi, Hiroshima, Japan"], "hot": 0, "department": null, "business_unit": "Unknown", "t_update": 1701163967, "t_create": 1700611200, "ats_job_id": "JR43928", "display_job_id": "JR43928", "type": "ATS", "id_locale": "JR43928-en", "job_description": "Our vision is to transform how the world uses information to enrich life for all. Micron Technology is a world leader in innovating memory and storage solutions that accelerate the transformation of information into intelligence, inspiring the world to learn, communicate and advance faster than ever. JR43928 \u7b2c2\u65b0\u5352 Technology Development (Evergreen) TD advanced CMOS Device & Process Integration \u306f\u3001Micron\u306e DRAM \u3084HBM\u30c6\u30af\u30ce\u30ed\u30b8\u30fc\u306e\u30ed\u30fc\u30c9\u30de\u30c3\u30d7\u3092\u30b5\u30dd\u30fc\u30c8\u3057\u3001\u73fe\u5728\u304a\u3088\u3073\u5c06\u6765\u306e CMOS \u30c6\u30af\u30ce\u30ed\u30b8\u30fc\u306e\u958b\u767a\u306b\u76f4\u63a5\u8ca2\u732e\u3059\u308b\u5f79\u5272\u3092\u62c5\u3063\u3066\u3044\u307e\u3059\u3002 \u30d7\u30ed\u30bb\u30b9\u30c1\u30fc\u30e0\u3001\u56de\u8def\u3001\u8a2d\u8a08\u3001\u30ec\u30a4\u30a2\u30a6\u30c8\u3001\u88fd\u54c1\u30a8\u30f3\u30b8\u30cb\u30a2\u30ea\u30f3\u30b0\u304a\u3088\u3073\u30e2\u30c7\u30ea\u30f3\u30b0/TCAD \u30c1\u30fc\u30e0\u3068\u7dca\u5bc6\u306b\u9023\u643a\u3057\u3066\u9802\u304f\u3053\u3068\u3092\u671f\u5f85\u3057\u3066\u3044\u307e\u3059\u3002 \u30c7\u30d0\u30a4\u30b9\u30bf\u30fc\u30b2\u30c3\u30c8\u306e\u8a2d\u5b9a\u3068\u3001\u30bf\u30fc\u30b2\u30c3\u30c8\u3092\u9054\u6210\u3059\u308b\u305f\u3081\u306e\u30c8\u30e9\u30f3\u30b8\u30b9\u30bf\u69cb\u9020\u3068\u30d7\u30ed\u30bb\u30b9\u304a\u3088\u3073\u30a4\u30f3\u30c6\u30b0\u30ec\u30fc\u30b7\u30e7\u30f3\u6280\u8853\u306e\u69cb\u7bc9\u306b\u8ca2\u732e\u3057\u3066\u9802\u304d\u307e\u3059\u3002 \u671f\u5f85\u3055\u308c\u308b\u8cac\u52d9 (\u76ee\u5b89) \u958b\u767a\u30ed\u30fc\u30c9\u30de\u30c3\u30d7\u306e\u4f5c\u6210\u3001\u5b9f\u884c\u306b\u8ca2\u732e\u3057\u3066\u9802\u304d\u307e\u3059 \u30d1\u30d5\u30a9\u30fc\u30de\u30f3\u30b9\u3068\u30b3\u30b9\u30c8\u52b9\u7387\u306e\u4e21\u65b9\u3067\u5f53\u793e\u306e\u30c7\u30d0\u30a4\u30b9\u30dd\u30fc\u30c8\u30d5\u30a9\u30ea\u30aa\u306e\u6539\u5584\u306b\u8ca2\u732e\u3057\u3066\u9802\u304d\u307e\u3059 \u5c06\u6765\u306e\u30c7\u30d0\u30a4\u30b9\u958b\u767a\u306e\u305f\u3081\u306e\u30b7\u30ea\u30b3\u30f3\u3092\u7528\u3044\u305f\u5b9f\u9a13\u306e\u8a08\u753b\u3001\u5b9f\u884c\u3001\u7d50\u679c\u306e\u5206\u6790\u3092\u3057\u3066\u9802\u304d\u307e\u3059 \u30c8\u30e9\u30f3\u30b8\u30b9\u30bf\u30e2\u30c7\u30eb\u3092\u691c\u8a3c\u3057\u3001\u5fc5\u8981\u306a\u5834\u5408\u306b\u306f\u4fee\u6b63\u30fb\u88dc\u6b63\u3092\u5b9f\u65bd\u3057\u3066\u9802\u304d\u307e\u3059 \u30c8\u30e9\u30f3\u30b8\u30b9\u30bf\u30fb\u30c7\u30b6\u30a4\u30f3\u30eb\u30fc\u30eb\u306e\u691c\u8a3c\u3001\u30d7\u30ed\u30bb\u30b9\u30e2\u30cb\u30bf\u30fb\u96fb\u6c17\u30c6\u30b9\u30c8\u306e\u69cb\u7bc9\u306b\u5f93\u4e8b\u3057\u3066\u9802\u304d\u307e\u3059 \u9762\u63a5\u3092\u901a\u3057\u3066\u3001\u66f4\u306b\u30de\u30c3\u30c1\u3059\u308b\u30dd\u30b8\u30b7\u30e7\u30f3\u304c\u3042\u308b\u5834\u5408\u306f\u5225\u306e\u30dd\u30b8\u30b7\u30e7\u30f3\u3092\u3054\u7d39\u4ecb\u3055\u305b\u3066\u3044\u305f\u3060\u304f\u3053\u3068\u304c\u3054\u3056\u3044\u307e\u3059\u3002 TD advanced CMOS Device & Process Integration \u306f\u3001Micron\u306e DRAM \u3084HBM\u30c6\u30af\u30ce\u30ed\u30b8\u30fc\u306e\u30ed\u30fc\u30c9\u30de\u30c3\u30d7\u3092\u30b5\u30dd\u30fc\u30c8\u3057\u3001\u73fe\u5728\u304a\u3088\u3073\u5c06\u6765\u306e CMOS \u30c6\u30af\u30ce\u30ed\u30b8\u30fc\u306e\u958b\u767a\u306b\u76f4\u63a5\u8ca2\u732e\u3059\u308b\u5f79\u5272\u3092\u62c5\u3063\u3066\u3044\u307e\u3059\u3002 \u30d7\u30ed\u30bb\u30b9\u30c1\u30fc\u30e0\u3001\u56de\u8def\u3001\u8a2d\u8a08\u3001\u30ec\u30a4\u30a2\u30a6\u30c8\u3001\u88fd\u54c1\u30a8\u30f3\u30b8\u30cb\u30a2\u30ea\u30f3\u30b0\u304a\u3088\u3073\u30e2\u30c7\u30ea\u30f3\u30b0/TCAD \u30c1\u30fc\u30e0\u3068\u7dca\u5bc6\u306b\u9023\u643a\u3057\u3066\u9802\u304f\u3053\u3068\u3092\u671f\u5f85\u3057\u3066\u3044\u307e\u3059\u3002 \u30c7\u30d0\u30a4\u30b9\u30bf\u30fc\u30b2\u30c3\u30c8\u306e\u8a2d\u5b9a\u3068\u3001\u30bf\u30fc\u30b2\u30c3\u30c8\u3092\u9054\u6210\u3059\u308b\u305f\u3081\u306e\u30c8\u30e9\u30f3\u30b8\u30b9\u30bf\u69cb\u9020\u3068\u30d7\u30ed\u30bb\u30b9\u304a\u3088\u3073\u30a4\u30f3\u30c6\u30b0\u30ec\u30fc\u30b7\u30e7\u30f3\u6280\u8853\u306e\u69cb\u7bc9\u306b\u8ca2\u732e\u3057\u3066\u9802\u304d\u307e\u3059\u3002 \u3053\u306e\u30dd\u30b8\u30b7\u30e7\u30f3\u3067\u6210\u529f\u3059\u308b\u306b\u306f\u3001\u6a19\u6e96\u7684\u306a CMOS \u30c8\u30e9\u30f3\u30b8\u30b9\u30bf\u7269\u7406\u306e\u7406\u89e3\u3001\u5148\u7aefCMOS\u30c7\u30d0\u30a4\u30b9(FinFET, Nanosheet, vertical Gate All Around)\u306e\u30d7\u30ed\u30bb\u30b9\u30a4\u30f3\u30c6\u30b0\u30ec\u30fc\u30b7\u30e7\u30f3\u3001\u304a\u3088\u3073\u30c7\u30d0\u30a4\u30b9\u306e\u77e5\u8b58\u304c\u3042\u308b\u3053\u3068\u304c\u63a8\u5968\u3055\u308c\u307e\u3059\u3002 \u89e3\u6790\u304a\u3088\u3073\u30c7\u30fc\u30bf\u5206\u6790\u30c4\u30fc\u30eb\u3001\u30c6\u30b9\u30c8\u30d7\u30ed\u30b0\u30e9\u30e0\u306e\u8a2d\u8a08\u3001\u304a\u3088\u3073\u30d1\u30e9\u30e1\u30c8\u30ea\u30c3\u30af\u30c6\u30b9\u30c8\u306b\u901a\u3058\u3066\u3044\u308b\u304b\u305f\u3092\u6b53\u8fce\u3057\u307e\u3059\u3002\u30c1\u30fc\u30e0\u306e\u540c\u50da\u3084\u30de\u30cd\u30fc\u30b8\u30e3\u30fc\u3068\u306e\u5354\u696d\u3092\u901a\u3058\u3066\u3001\u826f\u3044\u7d50\u679c\u3092\u9054\u6210\u3067\u304d\u308b\u3053\u3068\u3092\u671f\u5f85\u3057\u3066\u3044\u307e\u3059\u3002 \u534a\u5c0e\u4f53\u30c7\u30d0\u30a4\u30b9\u306e\u4e00\u822c\u7684\u306a\u77e5\u8b58\u3068\u30d7\u30ed\u30bb\u30b9\u30a4\u30f3\u30c6\u30b0\u30ec\u30fc\u30b7\u30e7\u30f3\u30fb\u30c7\u30d0\u30a4\u30b9\u958b\u767a\u306b\u95a2\u9023\u3059\u308b\u6700\u5148\u7aef\u306e\u3001\u958b\u767a\u30a8\u30f3\u30b8\u30cb\u30a2\u3068\u3057\u3066\u3001\u512a\u308c\u305f\u30b3\u30df\u30e5\u30cb\u30b1\u30fc\u30b7\u30e7\u30f3\u30b9\u30ad\u30eb\u3068\u5206\u91ce\u6a2a\u65ad\u7684\u306a\u80fd\u529b\u3092\u767a\u63ee\u3059\u308b\u3053\u3068\u3092\u671f\u5f85\u3057\u3066\u3044\u307e\u3059\u3002 \u6c42\u3081\u3089\u308c\u308b\u8cc7\u683c (\u76ee\u5b89\u3068\u3057\u3066) \u7406\u7cfb\u5206\u91ce\u5c02\u653b\u3067\u5b66\u58eb\u4ee5\u4e0a \u65e5\u672c\u8a9e\u304b\u82f1\u8a9e\u80fd\u529b\u3001\u3082\u3057\u304f\u306f\u305d\u306e\u4e21\u65b9 \u512a\u308c\u305f\u30d7\u30ec\u30bc\u30f3\u30c6\u30fc\u30b7\u30e7\u30f3\u30b9\u30ad\u30eb CMOS\u30c7\u30d0\u30a4\u30b9\u6280\u8853\u3001\u30d7\u30ed\u30bb\u30b9\u30a4\u30f3\u30c6\u30b0\u30ec\u30fc\u30b7\u30e7\u30f3\u30fb\u30c7\u30d0\u30a4\u30b9\u958b\u767a\u306e\u696d\u754c\u7d4c\u9a13\u306e\u3042\u308b\u65b9\u3092\u6b53\u8fce\u3057\u307e\u3059 DRAM \u8a2d\u8a08\u307e\u305f\u306f\u30c6\u30b9\u30c8\u306e\u30b9\u30ad\u30eb\u306e\u958b\u767a\u306e\u7d4c\u9a13\u304c\u3042\u308b\u65b9\u3092\u6b53\u8fce\u3057\u307e\u3059 \u203b\u672c\u30dd\u30b8\u30b7\u30e7\u30f3\u306f\u672a\u7d4c\u9a13\u8005\u6b53\u8fce\u3067\u3059 About Micron Technology, Inc. We are an industry leader in innovative memory and storage solutions transforming how the world uses information to enrich life for all. With a relentless focus on our customers, technology leadership, and manufacturing and operational excellence, Micron delivers a rich portfolio of high-performance DRAM, NAND, and NOR memory and storage products through our Micron\u00ae and Crucial\u00ae brands. Every day, the innovations that our people create fuel the data economy, enabling advances in artificial intelligence and 5G applications that unleash opportunities \u2014 from the data center to the intelligent edge and across the client and mobile user experience. To learn more, please visit micron.com/careers All qualified applicants will receive consideration for employment without regard to race, color, religion, sex, sexual orientation, gender identity, national origin, veteran or disability status. To request assistance with the application process and/or for reasonable accommodations, please contact hrsupport_jp@micron.com Micron Prohibits the use of child labor and complies with all applicable laws, rules, regulations, and other international and industry labor standards. Micron does not charge candidates any recruitment fees or unlawfully collect any other payment from candidates as consideration for their employment with Micron.", "stars": 0.0, "medallionProgram": null, "location_flexibility": null, "work_location_option": null, "canonicalPositionUrl": "https://careers.micron.com/careers/job/19296299", "isPrivate": false}, {"id": 19274291, "name": "IT ENGINEER-AUTOMATION/AMHS", "location": "Higashi Hiroshima-shi, Hiroshima, Japan", "locations": ["Higashi Hiroshima-shi, Hiroshima, Japan"], "hot": 0, "department": "IT", "business_unit": "IT", "t_update": 1701063406, "t_create": 1700438400, "ats_job_id": "JR43876", "display_job_id": "JR43876", "type": "ATS", "id_locale": "JR43876-en", "job_description": "Automated Material Handling System(MCS, AMHS Baserv, AMAT APF\u7b49)\u306e\u8a2d\u8a08\u3001\u958b\u767a\u3001\u30c6\u30b9\u30c8\u3001\u30ea\u30ea\u30fc\u30b9\u3001\u30c8\u30e9\u30d6\u30eb\u5bfe\u5fdc Design, Development, Test, Release and Trouble support the Systems, e.g., Automated Material Handling system (MCS, AMHS Baserv, AMAT APF) Design, Development, Test, Release and Trouble support the reporting systems (Data Navigator, Reporting Services, etc.. ). These skills will be trained\uff09 Master's/Bachelor's Degree related to computer science or Engineering Database (Oracle) knowledge and SQL skills Software development experiences (Perl, Shell scripting, C++) Linux/Windows operations skills Ability to troubleshoot complex problems and address root causes Strong partnering and teamwork skills Strong time management skills English skills to acquire the supports from other sites and to communicate with customers", "stars": 0.0, "medallionProgram": null, "location_flexibility": null, "work_location_option": null, "canonicalPositionUrl": "https://careers.micron.com/careers/job/19274291", "isPrivate": false}, {"id": 19274191, "name": "IT Manufacturing Application Engineer", "location": "Higashi Hiroshima-shi, Hiroshima, Japan", "locations": ["Higashi Hiroshima-shi, Hiroshima, Japan"], "hot": 0, "department": "IT", "business_unit": "IT", "t_update": 1701063301, "t_create": 1700179200, "ats_job_id": "JR43826", "display_job_id": "JR43826", "type": "ATS", "id_locale": "JR43826-en", "job_description": "You will work closely with multiple teams that make up IT, Information security and Technology to drive impactful change. Design, engineering and implementation of application security solutions in a scalable way for a worldwide enterprise. Analyze and troubleshoot systems issues. Ensure that the potential impact of software development changes is well understood, using data to support understanding of upstream and downstream dependencies. 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Failure Analysis Engineers have to identify possible failures and geometry anomalies during development and provide early feedback on the results to improve device characteristics. Along with understanding the structure of next-generation products, you will use techniques such as TEM, FIB, SEM, and Emission analysis to identify failure locations and contribute to improving device yields. You will also be expected to work closely with the Integration Team, Process Team, and DRAM Engineering Group. To be successful in this position, knowledge/experience/skills in standard TEM, FIB, SEM, and Emission analysis, an understanding of basic semiconductor manufacturing processes, and knowledge of semiconductor devices is recommended. We also expect you to be skilled in TEM sample preparation methods, methods for bit counting of failed bits, and physical failure analysis and data analysis tools. We expect you to achieve good results through collaboration with your team colleagues and managers. We expect you to demonstrate excellent communication skills and cross-disciplinary abilities as a state-of-the-art DRAM development engineer related to process integration device development with general knowledge of semiconductor devices. Understanding of basic semiconductor manufacturing processes Capability to understand DRAM layouts and structures Understanding of the operating principles of DRAM and CMOS transistors Experience in failure analysis using TEM, FIB, and SEM Interested in failure analysis, and able to use the results of analysis to improve the next analysis, with ambition and motivation Excellent communication skills in Japanese and English Acquire accurate images and elemental analysis data using TEM, FIB, and SEM to identify the cause of failures. Understand layout and structure and approach the failure areas to obtain accurate data. Continuously improve techniques and quality by improving sample preparation methods and examining observation/analysis conditions. Communicate with YE engineers to understand expected failures and share analysis data. Provide high quality analysis results to the integration team and contribute to early yield improvement. 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