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To learn about your right to work click here.", "stars": 0.0, "medallionProgram": null, "location_flexibility": null, "work_location_option": null, "canonicalPositionUrl": "https://careers.micron.com/careers/job/18603174", "isPrivate": false}, {"id": 19399015, "name": "ADVANCED PACKAGING TECHNOLOGY DEVELOPMENT (APTD)- ENGINEER, PACKAGE PRE STACKING DEVELOPMENT", "location": "Taichung City, Taichung City, Taiwan", "locations": ["Taichung City, Taichung City, Taiwan"], "hot": 0, "department": "Tech Dev", "business_unit": "Tech Dev", "t_update": 1701401820, "t_create": 1701216000, "ats_job_id": "JR44398", "display_job_id": "JR44398", "type": "ATS", "id_locale": "JR44398-en", "job_description": "The Advanced Packaging Technology Development group supports Micron with packaging solutions for wafer and die level forms. 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You will also be responsible for sustaining and making the improvement efforts to yield and equipment performance to achieve high device yield, reliability, and cost efficiency.", "stars": 0.0, "medallionProgram": null, "location_flexibility": null, "work_location_option": null, "canonicalPositionUrl": "https://careers.micron.com/careers/job/19399015", "isPrivate": false}, {"id": 18803752, "name": "Distinguished Member of Technical Staff, DRAM Technology Development", "location": "Boise, Idaho, United States of America", "locations": ["Boise, Idaho, United States of America"], "hot": 0, "department": null, "business_unit": "Unknown", "t_update": 1698157601, "t_create": 1698105600, "ats_job_id": "JR42865", "display_job_id": "JR42865", "type": "ATS", "id_locale": "JR42865-en", "job_description": "Developing process flows and process integration schemes for next generation DRAM Designing novel devices and new materials that act as building blocks for next generation DRAM Delivering technical presentations to internal and external customers MS/PhD in electrical engineering, materials science, or related field, with at least 10 years of experience in DRAM development A proven leader in driving innovative solutions in DRAM technology Have a strong background in DRAM process integration, scaling and device physics Expertise in DRAM device physics, circuit design, system architecture, and performance optimization Experience in leading complex projects involving multiple disciplines and stakeholders Strong communication, presentation, and interpersonal skills Ability to work independently and creatively in a fast-paced environment Passion for learning new technologies and solving challenging problems", "stars": 0.0, "medallionProgram": null, "location_flexibility": null, "work_location_option": null, "canonicalPositionUrl": "https://careers.micron.com/careers/job/18803752", "isPrivate": false}, {"id": 18807966, "name": "DRAM Physical Failure Analysis Technology Development Engineer", "location": "Higashi Hiroshima-shi, Hiroshima, Japan", "locations": ["Higashi Hiroshima-shi, Hiroshima, Japan"], "hot": 0, "department": "Tech Dev", "business_unit": "Tech Dev", "t_update": 1699250535, "t_create": 1698883200, "ats_job_id": "JR42514", "display_job_id": "JR42514", "type": "ATS", "id_locale": "JR42514-en", "job_description": "\u671f\u5f85\u3055\u308c\u308b\u8cac\u52d9 (\u76ee\u5b89\u3068\u3057\u3066) TEM\u3001FIB\u3001SEM\u3092\u7528\u3044\u3066\u3001\u6545\u969c\u539f\u56e0\u3092\u7279\u5b9a\u3067\u304d\u308b\u6b63\u78ba\u306a\u753b\u50cf\u304a\u3088\u3073\u5143\u7d20\u5206\u6790\u30c7\u30fc\u30bf\u3092\u53d6\u5f97\u3057\u3066\u9802\u304d\u307e\u3059 \u6b63\u78ba\u306a\u30c7\u30fc\u30bf\u3092\u53d6\u5f97\u3059\u308b\u305f\u3081\u3001\u30ec\u30a4\u30a2\u30a6\u30c8\u304a\u3088\u3073\u69cb\u9020\u3092\u7406\u89e3\u3057\u6545\u969c\u90e8\u3078\u30a2\u30d7\u30ed\u30fc\u30c1\u3057\u307e\u3059 \u30b5\u30f3\u30d7\u30eb\u4f5c\u6210\u65b9\u6cd5\u306e\u6539\u5584\u3084\u89b3\u5bdf/\u5206\u6790\u6761\u4ef6\u306e\u691c\u8a0e\u306a\u3069\u3092\u884c\u3044\u3001\u7d99\u7d9a\u7684\u306b\u6280\u8853\u6539\u5584\u3068\u54c1\u8cea\u5411\u4e0a\u3092\u56f3\u308a\u307e\u3059 \u9ad8\u54c1\u8cea\u306a\u89e3\u6790\u7d50\u679c\u3092\u30a4\u30f3\u30c6\u30b0\u30ec\u30fc\u30b7\u30e7\u30f3\u30c1\u30fc\u30e0\u3078\u63d0\u4f9b\u3057\u3001\u65e9\u671f\u6b69\u7559\u307e\u308a\u5411\u4e0a\u306b\u8ca2\u732e\u3057\u3066\u9802\u304d\u307e\u3059 \u89e3\u6790\u88c5\u7f6e\u306e\u4fdd\u5b88\u3001\u30e1\u30a4\u30f3\u30c6\u30ca\u30f3\u30b9\u3082\u3001\u30c1\u30fc\u30e0\u30e1\u30f3\u30d0\u30fc\u3068\u5354\u696d\u3057\u3066\u5b9f\u65bd\u3057\u3066\u9802\u304d\u307e\u3059 \u6c42\u3081\u3089\u308c\u308b\u8cc7\u683c (\u76ee\u5b89\u3068\u3057\u3066) \u534a\u5c0e\u4f53\u88fd\u9020\u5de5\u7a0b\u306e\u57fa\u672c\u7684\u306a\u30d7\u30ed\u30bb\u30b9\u306e\u7406\u89e3 DRAM\u306e\u30ec\u30a4\u30a2\u30a6\u30c8\u3084\u69cb\u9020\u3092\u7406\u89e3\u3067\u304d\u308b\u80fd\u529b DRAM\u3084CMOS\u30c8\u30e9\u30f3\u30b8\u30b9\u30bf\u306e\u52d5\u4f5c\u539f\u7406\u306e\u7406\u89e3 TEM\u3001FIB\u3001SEM\u3092\u7528\u3044\u305f\u6545\u969c\u89e3\u6790\u306e\u7d4c\u9a13\u306e\u3042\u308b\u65b9 \u6545\u969c\u89e3\u6790\u306b\u8208\u5473\u304c\u3042\u308a\u3001\u89e3\u6790\u7d50\u679c\u304b\u3089\u307e\u305f\u6b21\u306e\u89e3\u6790\u7d50\u679c\u306e\u66f4\u306a\u308b\u6539\u5584\u306b\u7e4b\u3052\u3066\u3044\u3053\u3046\u3068\u3044\u3046\u3001\u5411\u4e0a\u5fc3\u3068\u610f\u6b32\u306e\u3042\u308b\u65b9\u3092\u6b53\u8fce\u3057\u307e\u3059 \u65e5\u672c\u8a9e\u3001\u82f1\u8a9e\u3092\u7528\u3044\u305f\u512a\u308c\u305f\u30b3\u30df\u30e5\u30cb\u30b1\u30fc\u30b7\u30e7\u30f3\u30b9\u30ad\u30eb We need an enthusiastic engineer who is passionate about solving issues and turning things around for the better. Failure Analysis Engineers have to identify possible failures and geometry anomalies during development and provide early feedback on the results to improve device characteristics. Along with understanding the structure of next-generation products, you will use techniques such as TEM, FIB, SEM, and Emission analysis to identify failure locations and contribute to improving device yields. You will also be expected to work closely with the Integration Team, Process Team, and DRAM Engineering Group. To be successful in this position, knowledge/experience/skills in standard TEM, FIB, SEM, and Emission analysis, an understanding of basic semiconductor manufacturing processes, and knowledge of semiconductor devices is recommended. We also expect you to be skilled in TEM sample preparation methods, methods for bit counting of failed bits, and physical failure analysis and data analysis tools. We expect you to achieve good results through collaboration with your team colleagues and managers. We expect you to demonstrate excellent communication skills and cross-disciplinary abilities as a state-of-the-art DRAM development engineer related to process integration device development with general knowledge of semiconductor devices. Understanding of basic semiconductor manufacturing processes Capability to understand DRAM layouts and structures Understanding of the operating principles of DRAM and CMOS transistors Experience in failure analysis using TEM, FIB, and SEM Interested in failure analysis, and able to use the results of analysis to improve the next analysis, with ambition and motivation Excellent communication skills in Japanese and English Acquire accurate images and elemental analysis data using TEM, FIB, and SEM to identify the cause of failures. Understand layout and structure and approach the failure areas to obtain accurate data. Continuously improve techniques and quality by improving sample preparation methods and examining observation/analysis conditions. Communicate with YE engineers to understand expected failures and share analysis data. Provide high quality analysis results to the integration team and contribute to early yield improvement. Maintain the analysis equipment in collaboration with team members.", "stars": 0.0, "medallionProgram": null, "location_flexibility": null, "work_location_option": null, "canonicalPositionUrl": "https://careers.micron.com/careers/job/18807966", "isPrivate": false}, {"id": 19296299, "name": "\u7b2c2\u65b0\u5352 Technology Development", "location": "Higashi Hiroshima-shi, Hiroshima, Japan", "locations": ["Higashi Hiroshima-shi, Hiroshima, Japan"], "hot": 0, "department": null, "business_unit": "Unknown", "t_update": 1701163967, "t_create": 1700611200, "ats_job_id": "JR43928", "display_job_id": "JR43928", "type": "ATS", "id_locale": "JR43928-en", "job_description": "Our vision is to transform how the world uses information to enrich life for all. Micron Technology is a world leader in innovating memory and storage solutions that accelerate the transformation of information into intelligence, inspiring the world to learn, communicate and advance faster than ever. JR43928 \u7b2c2\u65b0\u5352 Technology Development (Evergreen) TD advanced CMOS Device & Process Integration \u306f\u3001Micron\u306e DRAM \u3084HBM\u30c6\u30af\u30ce\u30ed\u30b8\u30fc\u306e\u30ed\u30fc\u30c9\u30de\u30c3\u30d7\u3092\u30b5\u30dd\u30fc\u30c8\u3057\u3001\u73fe\u5728\u304a\u3088\u3073\u5c06\u6765\u306e CMOS \u30c6\u30af\u30ce\u30ed\u30b8\u30fc\u306e\u958b\u767a\u306b\u76f4\u63a5\u8ca2\u732e\u3059\u308b\u5f79\u5272\u3092\u62c5\u3063\u3066\u3044\u307e\u3059\u3002 \u30d7\u30ed\u30bb\u30b9\u30c1\u30fc\u30e0\u3001\u56de\u8def\u3001\u8a2d\u8a08\u3001\u30ec\u30a4\u30a2\u30a6\u30c8\u3001\u88fd\u54c1\u30a8\u30f3\u30b8\u30cb\u30a2\u30ea\u30f3\u30b0\u304a\u3088\u3073\u30e2\u30c7\u30ea\u30f3\u30b0/TCAD \u30c1\u30fc\u30e0\u3068\u7dca\u5bc6\u306b\u9023\u643a\u3057\u3066\u9802\u304f\u3053\u3068\u3092\u671f\u5f85\u3057\u3066\u3044\u307e\u3059\u3002 \u30c7\u30d0\u30a4\u30b9\u30bf\u30fc\u30b2\u30c3\u30c8\u306e\u8a2d\u5b9a\u3068\u3001\u30bf\u30fc\u30b2\u30c3\u30c8\u3092\u9054\u6210\u3059\u308b\u305f\u3081\u306e\u30c8\u30e9\u30f3\u30b8\u30b9\u30bf\u69cb\u9020\u3068\u30d7\u30ed\u30bb\u30b9\u304a\u3088\u3073\u30a4\u30f3\u30c6\u30b0\u30ec\u30fc\u30b7\u30e7\u30f3\u6280\u8853\u306e\u69cb\u7bc9\u306b\u8ca2\u732e\u3057\u3066\u9802\u304d\u307e\u3059\u3002 \u671f\u5f85\u3055\u308c\u308b\u8cac\u52d9 (\u76ee\u5b89) \u958b\u767a\u30ed\u30fc\u30c9\u30de\u30c3\u30d7\u306e\u4f5c\u6210\u3001\u5b9f\u884c\u306b\u8ca2\u732e\u3057\u3066\u9802\u304d\u307e\u3059 \u30d1\u30d5\u30a9\u30fc\u30de\u30f3\u30b9\u3068\u30b3\u30b9\u30c8\u52b9\u7387\u306e\u4e21\u65b9\u3067\u5f53\u793e\u306e\u30c7\u30d0\u30a4\u30b9\u30dd\u30fc\u30c8\u30d5\u30a9\u30ea\u30aa\u306e\u6539\u5584\u306b\u8ca2\u732e\u3057\u3066\u9802\u304d\u307e\u3059 \u5c06\u6765\u306e\u30c7\u30d0\u30a4\u30b9\u958b\u767a\u306e\u305f\u3081\u306e\u30b7\u30ea\u30b3\u30f3\u3092\u7528\u3044\u305f\u5b9f\u9a13\u306e\u8a08\u753b\u3001\u5b9f\u884c\u3001\u7d50\u679c\u306e\u5206\u6790\u3092\u3057\u3066\u9802\u304d\u307e\u3059 \u30c8\u30e9\u30f3\u30b8\u30b9\u30bf\u30e2\u30c7\u30eb\u3092\u691c\u8a3c\u3057\u3001\u5fc5\u8981\u306a\u5834\u5408\u306b\u306f\u4fee\u6b63\u30fb\u88dc\u6b63\u3092\u5b9f\u65bd\u3057\u3066\u9802\u304d\u307e\u3059 \u30c8\u30e9\u30f3\u30b8\u30b9\u30bf\u30fb\u30c7\u30b6\u30a4\u30f3\u30eb\u30fc\u30eb\u306e\u691c\u8a3c\u3001\u30d7\u30ed\u30bb\u30b9\u30e2\u30cb\u30bf\u30fb\u96fb\u6c17\u30c6\u30b9\u30c8\u306e\u69cb\u7bc9\u306b\u5f93\u4e8b\u3057\u3066\u9802\u304d\u307e\u3059 \u9762\u63a5\u3092\u901a\u3057\u3066\u3001\u66f4\u306b\u30de\u30c3\u30c1\u3059\u308b\u30dd\u30b8\u30b7\u30e7\u30f3\u304c\u3042\u308b\u5834\u5408\u306f\u5225\u306e\u30dd\u30b8\u30b7\u30e7\u30f3\u3092\u3054\u7d39\u4ecb\u3055\u305b\u3066\u3044\u305f\u3060\u304f\u3053\u3068\u304c\u3054\u3056\u3044\u307e\u3059\u3002 TD advanced CMOS Device & Process Integration \u306f\u3001Micron\u306e DRAM \u3084HBM\u30c6\u30af\u30ce\u30ed\u30b8\u30fc\u306e\u30ed\u30fc\u30c9\u30de\u30c3\u30d7\u3092\u30b5\u30dd\u30fc\u30c8\u3057\u3001\u73fe\u5728\u304a\u3088\u3073\u5c06\u6765\u306e CMOS \u30c6\u30af\u30ce\u30ed\u30b8\u30fc\u306e\u958b\u767a\u306b\u76f4\u63a5\u8ca2\u732e\u3059\u308b\u5f79\u5272\u3092\u62c5\u3063\u3066\u3044\u307e\u3059\u3002 \u30d7\u30ed\u30bb\u30b9\u30c1\u30fc\u30e0\u3001\u56de\u8def\u3001\u8a2d\u8a08\u3001\u30ec\u30a4\u30a2\u30a6\u30c8\u3001\u88fd\u54c1\u30a8\u30f3\u30b8\u30cb\u30a2\u30ea\u30f3\u30b0\u304a\u3088\u3073\u30e2\u30c7\u30ea\u30f3\u30b0/TCAD \u30c1\u30fc\u30e0\u3068\u7dca\u5bc6\u306b\u9023\u643a\u3057\u3066\u9802\u304f\u3053\u3068\u3092\u671f\u5f85\u3057\u3066\u3044\u307e\u3059\u3002 \u30c7\u30d0\u30a4\u30b9\u30bf\u30fc\u30b2\u30c3\u30c8\u306e\u8a2d\u5b9a\u3068\u3001\u30bf\u30fc\u30b2\u30c3\u30c8\u3092\u9054\u6210\u3059\u308b\u305f\u3081\u306e\u30c8\u30e9\u30f3\u30b8\u30b9\u30bf\u69cb\u9020\u3068\u30d7\u30ed\u30bb\u30b9\u304a\u3088\u3073\u30a4\u30f3\u30c6\u30b0\u30ec\u30fc\u30b7\u30e7\u30f3\u6280\u8853\u306e\u69cb\u7bc9\u306b\u8ca2\u732e\u3057\u3066\u9802\u304d\u307e\u3059\u3002 \u3053\u306e\u30dd\u30b8\u30b7\u30e7\u30f3\u3067\u6210\u529f\u3059\u308b\u306b\u306f\u3001\u6a19\u6e96\u7684\u306a CMOS \u30c8\u30e9\u30f3\u30b8\u30b9\u30bf\u7269\u7406\u306e\u7406\u89e3\u3001\u5148\u7aefCMOS\u30c7\u30d0\u30a4\u30b9(FinFET, Nanosheet, vertical Gate All Around)\u306e\u30d7\u30ed\u30bb\u30b9\u30a4\u30f3\u30c6\u30b0\u30ec\u30fc\u30b7\u30e7\u30f3\u3001\u304a\u3088\u3073\u30c7\u30d0\u30a4\u30b9\u306e\u77e5\u8b58\u304c\u3042\u308b\u3053\u3068\u304c\u63a8\u5968\u3055\u308c\u307e\u3059\u3002 \u89e3\u6790\u304a\u3088\u3073\u30c7\u30fc\u30bf\u5206\u6790\u30c4\u30fc\u30eb\u3001\u30c6\u30b9\u30c8\u30d7\u30ed\u30b0\u30e9\u30e0\u306e\u8a2d\u8a08\u3001\u304a\u3088\u3073\u30d1\u30e9\u30e1\u30c8\u30ea\u30c3\u30af\u30c6\u30b9\u30c8\u306b\u901a\u3058\u3066\u3044\u308b\u304b\u305f\u3092\u6b53\u8fce\u3057\u307e\u3059\u3002\u30c1\u30fc\u30e0\u306e\u540c\u50da\u3084\u30de\u30cd\u30fc\u30b8\u30e3\u30fc\u3068\u306e\u5354\u696d\u3092\u901a\u3058\u3066\u3001\u826f\u3044\u7d50\u679c\u3092\u9054\u6210\u3067\u304d\u308b\u3053\u3068\u3092\u671f\u5f85\u3057\u3066\u3044\u307e\u3059\u3002 \u534a\u5c0e\u4f53\u30c7\u30d0\u30a4\u30b9\u306e\u4e00\u822c\u7684\u306a\u77e5\u8b58\u3068\u30d7\u30ed\u30bb\u30b9\u30a4\u30f3\u30c6\u30b0\u30ec\u30fc\u30b7\u30e7\u30f3\u30fb\u30c7\u30d0\u30a4\u30b9\u958b\u767a\u306b\u95a2\u9023\u3059\u308b\u6700\u5148\u7aef\u306e\u3001\u958b\u767a\u30a8\u30f3\u30b8\u30cb\u30a2\u3068\u3057\u3066\u3001\u512a\u308c\u305f\u30b3\u30df\u30e5\u30cb\u30b1\u30fc\u30b7\u30e7\u30f3\u30b9\u30ad\u30eb\u3068\u5206\u91ce\u6a2a\u65ad\u7684\u306a\u80fd\u529b\u3092\u767a\u63ee\u3059\u308b\u3053\u3068\u3092\u671f\u5f85\u3057\u3066\u3044\u307e\u3059\u3002 \u6c42\u3081\u3089\u308c\u308b\u8cc7\u683c (\u76ee\u5b89\u3068\u3057\u3066) \u7406\u7cfb\u5206\u91ce\u5c02\u653b\u3067\u5b66\u58eb\u4ee5\u4e0a \u65e5\u672c\u8a9e\u304b\u82f1\u8a9e\u80fd\u529b\u3001\u3082\u3057\u304f\u306f\u305d\u306e\u4e21\u65b9 \u512a\u308c\u305f\u30d7\u30ec\u30bc\u30f3\u30c6\u30fc\u30b7\u30e7\u30f3\u30b9\u30ad\u30eb CMOS\u30c7\u30d0\u30a4\u30b9\u6280\u8853\u3001\u30d7\u30ed\u30bb\u30b9\u30a4\u30f3\u30c6\u30b0\u30ec\u30fc\u30b7\u30e7\u30f3\u30fb\u30c7\u30d0\u30a4\u30b9\u958b\u767a\u306e\u696d\u754c\u7d4c\u9a13\u306e\u3042\u308b\u65b9\u3092\u6b53\u8fce\u3057\u307e\u3059 DRAM \u8a2d\u8a08\u307e\u305f\u306f\u30c6\u30b9\u30c8\u306e\u30b9\u30ad\u30eb\u306e\u958b\u767a\u306e\u7d4c\u9a13\u304c\u3042\u308b\u65b9\u3092\u6b53\u8fce\u3057\u307e\u3059 \u203b\u672c\u30dd\u30b8\u30b7\u30e7\u30f3\u306f\u672a\u7d4c\u9a13\u8005\u6b53\u8fce\u3067\u3059 About Micron Technology, Inc. We are an industry leader in innovative memory and storage solutions transforming how the world uses information to enrich life for all. With a relentless focus on our customers, technology leadership, and manufacturing and operational excellence, Micron delivers a rich portfolio of high-performance DRAM, NAND, and NOR memory and storage products through our Micron\u00ae and Crucial\u00ae brands. Every day, the innovations that our people create fuel the data economy, enabling advances in artificial intelligence and 5G applications that unleash opportunities \u2014 from the data center to the intelligent edge and across the client and mobile user experience. To learn more, please visit micron.com/careers All qualified applicants will receive consideration for employment without regard to race, color, religion, sex, sexual orientation, gender identity, national origin, veteran or disability status. To request assistance with the application process and/or for reasonable accommodations, please contact hrsupport_jp@micron.com Micron Prohibits the use of child labor and complies with all applicable laws, rules, regulations, and other international and industry labor standards. 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